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| Ordering number:ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features * Low ON resistance. * 4V drive. Package Dimensions unit:mm 2093A [2SK3285] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2169 [2SK3285] 10.2 4.5 1.3 0.8 9.9 2.0 8.8 2.7 1.6 4.5 1 2 3 1.2 0.8 2.55 2.55 0.4 1.5 2.5 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2280 No.6358-1/5 2.7 2SK3285 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 30 20 40 80 1.65 40 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A IS=20A, VGS=0 1.0 12 18 17 24 1000 410 160 11 210 80 85 17 4.0 3.5 1.0 1.2 23 34 Conditions Ratings min 30 1 10 2.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=10A RL=1.5 D VOUT G P.G 50 S No.6358-2/5 2SK3285 10 ID -- VDS 8.0V 16 14 ID -- VGS VDS=10V 10.0V V 8 3.0 V 9 3.5 V Drain Current, ID - A 7 6 5 4 3 2 1 0 0 6.0 VGS=2.5V Drain Current, ID - A V 4.5 12 10 8 6 4 2 0 Tc= 0 0.5 1.0 1.5 2.0 --25 25 C C 2.5 3.0 75C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.5 4.0 Drain-to-Source Voltage, VDS - V 60 55 IT00379 60 Gate-to-Source Voltage, VGS - V IT00380 RDS(on) -- VGS Tc=25C RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) - m Static Drain-to-Source On-State Resistance, RDS(on) - m 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 50 40 10A ID=4A 30 20 =4.5V , V GS I D=4A 0.0V , V S=1 I D=10A G 10 0 --75 --50 --25 0 25 50 75 100 125 150 175 Gate-to-Source Voltage, VGS - V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 3 5 IT00381 2.0 1.8 Case Temperature, Tc - C IT00382 yfs -- ID VDS=10V Cutoff Voltage, VGS(off) - V VGS(off) -- Tc VDS=10V ID=1mA Forward Transfer Admittance, | yfs | - S 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 T 25C c=-- 75C C 25 Drain Current, ID - A 1.0 10 IT00383 7 0 --40 --20 0 20 40 60 80 100 120 Case Temperature, Tc - C 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 IT00384 100 7 5 3 2 IF -- VSD VGS=0 Ciss, Coss, Crss -- VDS f=1MHz Forward Current, IF - A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Ciss, Coss, Crss - pF Ciss Coss Crss 5C =7 0.3 0.4 25 C 0.6 0.01 7 5 3 2 0.001 0.2 0.5 --25 C 0.7 0.8 Tc 0.9 1.0 1.1 1.2 0 5 10 15 20 25 30 IT00386 Diode Forward Voltage, VSD - V IT00385 Drain-to-Source Voltage, VDS - V No.6358-3/5 2SK3285 10 VGS -- Qg VDS=10V ID=10A Gate-to-Source Voltage, VGS - V 9 8 7 6 5 4 3 2 1 0 0 1000 7 5 SW Time -- ID VDD=15V VGS=10V tr td(off) tf Switching Time, SW Time - ns 3 2 100 7 5 3 2 td(on) 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00388 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 IT00387 Total Gate Charge, Qg - nC 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Drain Current, ID - A ASO 100s ID=20A 1ms 2.0 PD -- Ta Allowable Power Dissipation, PD - W IDP=80A <10s 1.65 1.5 Drain Current, ID - A DC op era 10ms tio n 100ms Operation in this area is limited by RDS(on). 1.0 0.1 7 5 3 Tc=25C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 0.5 0 23 5 7 1.0 23 5 7 10 23 5 7 100 IT00389 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS - V 60 Ambient Temperature, Ta - C 60 IT00391 PD -- Tc ID -- Tc Allowable Power Dissipation, PD - W 50 50 40 Drain Current, ID - A 40 30 30 Limited by package 20 20 10 10 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc - C IT00390 Case Temperature, Tc - C IT01019 No.6358-4/5 2SK3285 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6358-5/5 |
Price & Availability of 2SK3285
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